Beijing YiXin Technology Co., Ltd.

Superjunction devices

（Super Junction MOSFET）

realizationNType andPPeriodic arrangement structure voltage resistant layer，Introduce high concentration and equal amount of heterogeneous charges，Transitioning from surface field to internal field，Compared to traditional methodsVDMOSdeviceRdson*A-BVRelationship from2.5The power becomes1.32The second party。

CoolSemi SJThe product adopts advanced super junction technology and optimized design structure，Extremely low characteristic on resistance（Rdson*A）be better thanInfineon C6series，Effectively improve the efficiency and power density of switch mode power supplies。

IGBT

（Insulated Gate Bipolar Transistor，AbbreviationIGBT）

Power devices andVDMOSThe difference lies innNot underneath the epitaxial layern+Layer butp+layer。When conductingnType drift region generates conductivity modulation effect，Significantly reduce the conduction voltage drop。

CoolSemiofIGBTPower devices adopt trench gate field stop design，The thickness of the epitaxial layer is reduced to60um，Vcesatachieve1.45V，Comparable in performanceInfineon IFX6。

Intelligent power moduleIPM

（Intelligent Power Module）

Integrated driver circuit、Specialized control for protecting circuitsIC，The peripheral circuit design is more compact、easily。controlICHigh matching with power chip performance ensures module reliability、Better stability，Protection function responds more accurately and quickly。

CoolSemi IPM Integrated with high-performance power devices and drivers highly compatible with power devicesHVIC。Integrating temperature detection and self-protection functions。

Silicon carbide diode

（Schottky Barrier Diode，SBD）

WithSiCompared to diodes，The significant advantage is the increase in blocking voltage，Almost no reverse recovery and better thermal stability，And the reverse recovery characteristic is not affected by temperature。

Silicon carbide diodes combine the excellent switching characteristics of Schottky structures withPiNThe characteristic of low leakage current possessed by the structure。

silicon carbideMOSFET

(Metal-Oxide-Semiconductor Field-Effect Transistor)

Material properties based on silicon carbide，Has lower switching losses and higher operating frequency，Very suitable for the application needs of power electronics。

Its wide bandgap characteristic makes silicon carbideMOSFETCapable of withstanding extreme working environments with high temperatures，The high thermal conductivity characteristic can reduce the volume and quantity of heat dissipation devices required for power devices，High critical breakdown field strength makes silicon carbideMOSFETHas lower on resistance while maintaining voltage resistance conditions，High saturation speed gives it higher switching frequency and superior reverse recovery characteristics。

Gallium Nitride High Electron Mobility Transistor

（GaN HEMT）

The device adoptspGaNframework，Having the characteristic of being normally closed，Corresponding silicon（Si）Compared to other devices，Having a gate charge and output charge one order of magnitude lower，Combining almost zero reverse recovery charge，Can support simpler topology structures，Achieve higher system efficiency。